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Principle of SIMS (Secondary Ion Mass Spectrometry)
In the SIMS process in our instrument primary gallium ions knock out secondary ions and molecules from the surface atomic layers. These secondary ions are detected as a mass-to-charge ratio by the quadrupole mass spectrometer. As well as secondary ions, this sputtering process generates large numbers electrons, which can be used to produce a physical image of the sample surface similar to that obtained in an SEM.
SIMS spectra can be acquired in a point and shoot manner. Multiple static points, small areas and large areas can be scanned from chemical or physical (SEM) images highlighting the areas of interest. These typically only take 30s to acquire. Chemical and molecular maps can also be rapidly (about 30s each) acquired to determine local inhomogeneities in surface chemistry. The use of SIMS with XPS is a powerful combination of techniques for the identification of surface distributions of elemental and molecular species, optimised sensitivity coupled with chemical state quantification: Issues of surface and interface contaminants and compounds are often best addressed with both the two methods, providing a faster and more comprehensive materials characterisation. Information Available from SIMSSIMS can provide us with the following information:
Example Range of Materials and Samples for SIMS
Our site expert on SIMS is Dr Stephen Jenkins. Application Notes |
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